1/f (One-Over-F) Noise in Metal Oxide Semiconductors (MOS)

I would like to thank Paras Dagli for making this list possible!

see also
1/f noise in electronic devices: review and modeling
1/f noise in electronic devices: the rest .

Acronyms: MOS - metal oxide semiconductos; MOSFET - metal oxide semiconductos field effect transistors;

2001

• Masato Toita, Tomohiro Akaboshi, Hasaya Imai (2001),
  "1/f noise reduction in PMOSFETs by an additional preoxidation cleaning with an ammonia hydrogen peroxide mixture",
  IEEE Electron Device Letters, 22(11):548-550.
  [PDF]

2000

• CH Chen, MJ Deen (2000),
  "Direct extraction of the channel thermal noise in MOSFETs from measurements of their RF noise parameters",
  Journal of Vacuum Science and Technology, A18(2):757-760.

• WS Kwan, CH Chen, MJ Deen (2000),
  "Hot-carrier effects on RF noise characteristics of LDD MOSFETs",
  Journal of Vacuum Science and Technology, A18(2):765-769.

1999

• Z Celik-Butler, P Vasina (1999),
  "Channel length scaling of 1/f noise in 0.18um technology MDD n-MOSFETs",
  Solid-State Electronics, 43(9):1695-1701.

• CG Jakobson (1999),
  "1/f noise in ion sensitive field effect transistors from subthreshold to saturation",
  IEEE Transactions on Electron Devices, 46(1):259-261

• UH Liaw, YK Su (1999),
  "1/f noise measurements on indium antimonide metal-oxide-semiconductor field-effect transistors",
  Journal of Applied Physics, 85(12):8485-8489.
  [ abstract ]

• W Marshall Leach, Jr. (1999),
  "Noise relations for parallel connected transistors",
  Journal of the Audio Engineering Society. 47(3):112-118.

• MG Peters, JI Dijkhuis, LW Molenkamp (1999),
  "Random telegraph signals and 1/f noise in a silicon quantum dot",
  Journal of Applied Physics, 86(3):1523-1526. [ abstract]

• E Simon and C Claeys (1999),
  "On the flicker noise in submicron silicon MOSFETs",
  Solid-State Electronics, 43:865-882.

• JC Vildeuil, M Valenza, D Rigaud (1999),
  "Extraction of the BSIM3 1/f noise parameters in CMOS transistors",
  Microelectronics Journal, 30(2):199-205.

• JP Xu, PT Lai, YC Cheng (1999),
  "1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses",
  Journal of Applied Physics, 86(9):5203-5206.
  [ abstract]

• T Yoshitomi, H Kimijima, S Ishizuka, Y Miyahara, T Ohguro, E Morifuji, T Morimoto, HS Momose, Y Katsumata, H Iwai (1999),
  "A study of self-aligned doped channel MOSFET structure for low power and low 1/f noise operation",
  Solid-State Electronics, 43(7):1219-1224.

1998

• C Jakobson, I Bloom and Y Nemirovsky (1998),
  "1/f noise in CMOS transistors for analog applications from subthreshold to saturation",
  Solid-State Electronics, 42:1807-1817.

• SL Jang (1998),
  "Low-frequency 1/f noise model for short-channel LDD MOSFETs ",
  Solid-State Electronics, 42(6):891-899.

• ME Levinshtein, SL Rumyantsev, R Gaska, JW Yang, MS Shur (1998),
  "AlGaN/GaN high electron mobility field effect transistors with low 1/f noise",
  Applied Physics Letters, 73(8):1089-1091

• C Surya, W Wang, PT Lai (1998),
  "Characterization of flicker noise in N2O and NH3 nitrided MOSFETs due to low-energy Ar+ backsurface gettering",
  Semiconductor Science Technology, 13(7):792-795.

• DR Wolters (1998),
  "Variation of the exponent of flicker noise in MOSFET",
  Solid-State Electronics, 42(5):803-?.

1997

• Amikam Nemirovsky (1997),
  "A revised model for carrier trapping-detrapping 1/f noise",
  Solid-State Electronics, 41:1811-1818.

• DP Triantis (1997),
  "Induced gate noise in MOSFETs revisited: the submicron case",
  Solid-State Electronics, 41:1937-1942.

1996

• M Aoki and M Kato (1996),
  "Hole induced 1/f noise increase in MOS transistors",
  IEEE electron device letters, 17:118-120.

• P Viktorovitch, P Rojo-Romeo, JL Leclercq, X Letartre, Jacques Tardy, M Oustric, and M Gendry (1996),
  "Low Frequency Noise Sources in InAlAs/InGaAs MODFET's",
  IEEE transactions on Electron Devices, 43(12):2085-.
  [ PDF]

1994

• J Chang, AA Abidi and CR Vishwanathan (1994),
  "Flicker noise in CMOS transistors from subthreshold to strong inversion at various temperatures",
  IEEE transactions on Electron Devices, 41:1965-1971.

• Daniel M Fleetwood, Timothy L Meisenheimer and John Scofield (1994),
  "1/f noise and radiation effects in MOS devices",
  IEEE Transactions on Electron Devices, 41(11):1954-1964.

• X Li, C Barros, EP Vandamme, KL Vandamme (1994),
  "Parameter extraction and 1/f noise in a surface and a bulk type p-channel LDD MOSFET",
  Solid-State Electronics, 37:1853-1862.

• John Scofield, Nick Borland, Daniel Fleetwood (1994),
  "Reconciliation of different gate-voltage dependencies of 1/f noise in n-MOS and p-MOS transistors",
  IEEE Transactions on Electron Devices, 41(11):?-?.

• Z Shi, JP Mieville and M Dutoit (1994),
  "Random telegraph signals in deep submicron n-MOSFETs",
  IEEE transactions on Electron Devices, 41:1161-1168.
  

• MH Tsai (1994),
  "The impact of device scaling on the current fluctuation in MOSFETs",
  IEEE Transactions on Electron Devices, 41(11):?-?.

• MH Tsai and TP Ma (1994),
  "The impact of device scaling on the current fluctuations in MOSFET's",
  IEEE Transactions on Electron Devices, 41:1161-1168.

• LKJ Vandamme, Xiaosong Li and Dominique Riguad (1994),
  "1/f noise in MOS devices, mobility or number fluctuations?",
  IEEE Transactions on Electron Devices, 41:1936-1945.

1993

• Xiaosong Li and LKJ Vandamme (1993),
  "An explanation of 1/f noise in LDD MOSFETs from the ohmic region to saturation",
  Solid-State Electronics,?:?-?.

• R Murowinski, G Linzhuang, MJ Deen (1993),
  "The effects of space radiation damage and temperature on the noise in CCDs and LDD MOS transistors",
  IEEE Transactions on Nuclear Science, 40(3):288-294.

1992

• Xiaosong Li and L. K. J. Vandamme (1992),
  "1/f noise in MOSFET as a diagnostic tool",
  Solid-State Electronics, 35:1477-1481.

• Y Zhu (1992),
  "A new 1/f noise model for metal-oxide-semiconductor field-effect transistors in saturation and deep saturation",
  Journal of Applied Physics, 72:5990-5998.

• Y Zhu, MJ Deen and TM Kleinpenning (1992),
  "A new 1/f noise model for Metal-Oxide-Semiconductor Field-Effect transistors in saturation and deep saturation",
  Journal of Applied Physics, 72(12):5990-5998.

1991

• ZH Fang, A Chovet, QP Zhu and JN Zhao (1991),
  "Theory and applications of 1/f trapping noise in MOSFETs for the whole biasing ranges",
  Solid-State Electronics, 34:327-333.

• Munecazu Tacano (1991),
  "A new approach to the Hooge noise parameter for 1/f noise in semiconductors",
  Solid-State Electronics, 34:917-918.

1990

• FN Hooge (1990),
  "The relation between 1/f noise and number of electrons",
  Phtsica B, 162:344-?.

• KK Hung, PK Ko, C Hu and YC Cheng (1990),
  "A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors",
  IEEE Transactions on Electron Devices, 37:654-665.

• M Peransin, P Vignaud, D Rigaud, and LKJ Vandamme (1990),
  "1/f noise in MODFETs at low drain bias",
  IEEE Transactions on Electron Devices, 37:2250-2253.

• H Wong, YC Cheng (1990),
  "Gate dielectric dependent flicker noise in metal-oxide semiconductor transistors",
  Journal of Applied Physics, ?:?-? (Jan).

1989

• Raj Jayaraman and Charles G. Sodini (1989),
  "1/f noise technique to extract the oxide trap density near the conduction band edge of silicon",
  IEEE Transactions on Electron Devices, 36:1773-1782.

• MJ Kirton, MJ Uren (1989),
  "Noise in solid-state microstructures: a new perspective on individual defects, interface states and low-frequency (1/f) noise",
  Advances in Physics, 38(4):367-468.

1988

• Z Celik-Butler, TY Hsiang (1988),
  "Determination of Si-SiO2 interface trap density by 1/f noise measurements",
  IEEE Transactions on Electron Devices, 35(10):1651-?.

• Q Peng (1988),
  "Channel length dependence of the 1/f noise in silicon metal-oxide-semiconductor field-effect transistors",
  Journal of Applied Physics, 64:907-912.

1986

• RHM Clevers (1986),
  "1/f noise and number fluctuation",
  Journal of Applied Physics, 60:3794-?.

• JB Pendry, PD Kirkman, E Castano (1986),
  "Electrons at disordered surfaces and 1/f noise",
  Physical Review Letters, 57(23),2983-?.

• C Surya, TY Hsiang (1986),
  "Theory and experiment on the 1/f^gamma noise in p-channel metal-oxide-semiconductor field-effect transistor at low drain bias",
  Physical Review B, 33:4898-4905.

1985

• MJ Uren, DJ Day and MJ Kirton (1985),
  "1/f and random telegraph noise in silicon metal-oxide-semiconductor field-effect transistors",
  Applied Physics Letters, 47:1195-?.

1984

• G Reimbold (1984),
  "Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion-influence of interface states",
  IEEE Transactions on Electron Devices, ED-31(9):1190-?.

1982

• FN Hooge (1982),
  "On expressions for 1/f noise in mobility",
  Physica B, 114:391-392.

• H Mikoshiba (1982),
  "1/f noise in n-channel silicon-gate MOS transistors",
  IEEE Transactions on Electron Devices, ED-29, 965-970.

1969

• FN Hooge (1969),
  "1/f noise is no surface effect",
  Physics Letters A, 29:139-?.

1957

• AL McWhorter (1957) ,
  "1/f noise and germanium surface properties",
  in Semiconductor Surface Physics, (Univ. Pennsylvania Press), pages 207-228.

1956

• AL McWhorter (1956),
  "1/f noise and related surface effects in germanium",
  in Semiconductor Surface Physics, ed. RH Kingston (Univ Penn Press).