1/f (One-Over-F) Noise in Electronic Devices

I would like to thank Paras Dagli for compiling papers on metal oxide semiconductors (MOS) in a separate list .

Other electronic devices are grouped here (e.g. metals, film conductors, superconductors, liquid conductors, optical devices, etc.). I need help from you for a more sensible sorting of these papers!

Review and modeling of 1/f noise in electronic devices are includede here .

2001

• AP Dmitriev, E Borovitskaya, ME Levinshtein, SL Rumyantsev, MS Shur (2001),
  "Low frequency noise in degenerate semiconductors",
  Journal of Applied Physics, 90(1):301-305.

• VA Kochelap, VN Sokolov, OM Bulashenko, JM Rubi (2001),
  "Coulomb suppression of surface noise",
  Applied Physics Letters, 78:2003-2005.

• SL Rumyantsev, N Pala, MS Shur, R Gaska, ME Levinshtein, M Asif Khan, G Simin, X Hu, J Yang (2001),
  "Thin n-GaN films with low levelof the 1/f noise" ,
  IEE Electronics Letters, 37(11):720-721.

• SL Rumyantsev, N Pala, MS Shur, R Gaska, ME Levinshtein, V Adivarahan, J Yang, G Simin, Asif Khan (2001),
  "Low frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors",
  Applied Physics Letters, 79(N6): 866-868.

• SL Rumyantsev, N Pala, MS Shur, R Gaska, ME Levinshtein, MA Khan, G Simin, X Hu, J Yang (2001),
  "Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors",
  Journal of Applied Physics, 90(1):310-314.

2000

• S An, MJ Deen (2000),
  "Low frequency noise in single growth planar separate absorption, grading, charge and multiplication avalanche photodiodes",
  IEEE Transactions on Electron Devices, 47(3):537-543.

• A Balandin (2000),
  "Gate-voltage dependence of low-frequency noise in the GaN/A1GaN heterostructure field-effect transistors",
  IEE Electronics Letters, 36:912-913.

• A Balandin, KL Wang, SJ Cai, R Li, CR Viswanathan, EN Wang, M Wojtowicz (2000),
  "Investigation of flicker noise and deep-levels in GaN/AlGaN transistors",
  Journal of Electron Materials, 29:297-301.

• Philip G Collins, MS Fuhrer, A Zettl (2000),
  "1/f noise in carbon nanotubes",
  Applied Physics Letters, 76(7):894-896.
  [ abstract]

• P Kolev, MJ Deen, HC Liu, JM Li, M Buchanan, ZR Wasilewski (2000),
  "Asymmetry in the dark current low frequency noise characteristics of B-B and B-C quantum well infrared photodetectors (QWIPs) from 10K to 80K",
  Journal of Applied Physics, 87(5):2400-2407.

• S Martin et al. (2000),
  "Flicker noise properties of organic thin-film transistors",
  Journal of Applied Physics, 87(7):3381-3385.

1999

• SK Arora, Ravi Kumar, Rajendra Singh, D Kanjilal, GK Mehta, Ravi Bathe, SI Patil, and SB Ogale (1999),
  "Electronic transport and 1/f noise studies in 250 MeV¹⁰⁷Ag ion irradiated La_0.75Ca_0.25MnO₃ thin films",
  Journal of Applied Physics,86(8):4452-4457.
  [ abstract ]

• A Balandin, S Morozov, S Cai, R Li, KL Wang, G Wijeratne, CR Viswanathan (1999),
  "Low flicker-noise GaN/A1GaN heterostructure field-effect transistors for microwave communications",
  IEEE Transactions on Microwave Theory & Technology, 47:1413-1417 (Special issue on Low-Noise Devices for Mobile Communications).

• A Balandin, S Morozov, G Wijeratne, SJ Cai, R Li, J Li, KL Wang, CR Viswanathan, Yu Dubrovskii (1999),
  "Effect of channel doping on the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors",
  Applied Physics Letters, 75:2064-2066.

• J Berntgen, K Heime, W Daumann, U Auer, F-J Tegude, A Matulionis (1999),
  "The 1/f noise of InP-based 2DEG devices and its dependence on mobility",
  IEEE Transactions on Electron Devices, in press.

• I Bloom, I Balberg (1999),
  "Nonlinear 1/f noise characteristics in luminescent porous silicon",
  Applied Physics Letters, 74(10):1427-1429.
  [ abstract]

• XY Chen, C Salm (1999),
  "Doping dependence of low-frequency noise in polycrystalline SiGe film resistors",
  Applied Physics Letters, 75(4):516-518.
  [ abstract]

• PJ Hakonen, JM Ikonen, Ü. Parts, JS Penttilä, LR Roschier, and MA Paalanen (1999),
  "Noise of a single electron transistor on a Si₃N₄ membrane",
  Journal of Applied Physics,86(5):2684-2686.
  [ abstract]

• ME Levinshtein, SL Rumyantsev, DC Look, RJ Molnar, M Asif Khan, G Simin, V Adivarahan, and MS Shur (1999),
  "Low-frequency noise in n-GaN with high electron mobility",
  Journal of Applied Physics, 86(9):5075-5078.
  [ abstract]

• ER Nowak, MB Weissman (1999),
  "Electrical noise in hysteretic ferromagnet-insulator-ferromagnet tunnel junctions",
  Applied Physics Letters, 74(4):600-602.
  [ abstract]

1998

• NV Dyakonova, ME Levinshtein, S Contreras, W Knap, Beaumont, P Gibart (1998),
  "Low-frequency noise in GaN",
  Semiconductors, 32(3):257-260.

• TGM Kleinpenning (1998),
  "Relation between 1/f noise and frequency independent loss tangent",
  Journal of Physics (Condensed Matter), 10:4245-4256.

• ME Levinshtein, F Pascal, S Contreras, W Knap, SL Rumyantsev, R Gaska, JW Jang, MS Shur (1998),
  "Low-frequency noise in GaN/GaAlN heterojunctions",
  Applied Physics Letters, 72(23):3053-3055.

• ME Levinshtein, SL Rumyantsev, R Gaska, JW Yang, MS Shur (1998),
  "AlGaN/GaN high electron mobility field effect transistors with low 1/f noise",
  Applied Physics Letters, 73(8):1089-1091.

1997

• A Balandin, S Cai, R Li, KL Wang, VR Rao, CR Viswanathan (1998),
  "Flicker noise in GaN/Al0.15 Ga 0.85N doped channel heterostructure field effect transistors",
  IEEE Electron Device Letters, 19:475-477.

• XY Chen, FN Hooge, MR Leys (1997),
  "The temperature dependence of 1/f noise in InP",
  Solid-State Electronics, 41:1269-1275.

• XY Chen, PM Koenraad, FN Hooge, JH Wolter, V Aninkevicus (1997),
  "1/f noise in delta-doped GaAs, analyzed in terms of mobility fluctuations",
  Physical Review B, 55:5290-5296.

• NV Dyakonova, ME Levinshtein, F Pascal, SL Rumyantsev (1997),
  "1/f noise in strongly doped n-type GaAs under band-band illumination conditions",
  Semiconductors, 31(7):728-732.

• LB Kiss, U Klein, CM Muirhead, J Smithyman and Z Gingl (1997),
  "Diffusive fluctuations, long-time and short-time cross-correlations in the motion of vortice-pancakes in different layers of YBCO/PBCO superlattices",
  Solid State Communications, 101:51-?.

• ME Levinshtein (1997),
  "Nature of the 1/f noise in the main materials of semiconductor electronics: Si, GaAs, and SiC" ,
  Physica Scripta, 69(1):79-84.

• ME Levinshtein, SL Rumyantsev, JW Palmour, DB Slater, Jr. (1997),
  "Low frequency noise in 4H Silicon Carbide",
  Journal of Applied Physics, 81(4):1758-1762.

• AV Yakimov (1997),
  "Analysis of intensity fluctuations in filtered 1/f noise for detection of mobile defects in semiconductors",
  Radiophysics and Quantum Electronics, 40(9):774-779.

1996

• MJ Deen (1996),
  "High frequency noise modelling and the scaling of the noise parameters of polysilicon emitter bipolar junction transistors",
  Canadian Journal of Physics, 74:S195-S199.

• MJ Deen, J Ilowski (1996),
  "Modeling of bonding pads and their effects on the high frequency characteristics of bipolar junction transistors",
  Canadian Journal of Physics, 74:S200-S204 (1996)

• Eddy Simoen, Stefaan Decoutere, Alan Cuthbertson, Cor L Claeys, and Ludo Deferm (1996),
  "Impact of polysilicon emitter interfacial layer engineering on the 1/f noise of bipolar transistors",
  IEEE Transactions on Electron Devices, 43(12):2261-2268.
  [ PDF]

• X Zhao, MJ Deen, L Tarof (1996),
  "Low frequency noise in separate absorption, grading, charge and multiplication (SAGCM) avalanche photodiodes",
  IEE Electronics Letters, 32(3):250-252.

1995

• MJ Deen, J Ilowski, P Yang (1995),
  "Low frequency noise in polysilicon-emitter bipolar junction transistors",
  Journal of Applied Physics, 77:6278-6288.

• HAW Markus, TGM Kleinpenning (1995),
  "Low-frequency noise in polysilicon emitter bipolar transistors",
  IEEE Transactions on Electron Devices, 42:720-727.

• RA Schiebel, D Bartholomew, M Bevan, RS List and M Ohlson (1995),
  "1/f noise and material defects in HgCdTe diodes",
  Journal of Electronic Materials, 24:1299-1303.

• N Siabi-Shahrivar, W Redman-White, P Ashburn, HA Kemhad-jian (1995),
  "Reduction of 1/f noise in polysilicon emitter bipolar transistors",
  Solid-State Electronics, 38:389-400.

1994

• LB Kiss, P Svedlindh (1994),
  "Noise in high Tc superconductors",
  IEEE Transactions on Electron Devices, 41:2112-?.

• TGM Kleinpenning (1994),
  "Low-Frequency noise in modern bipolar transistors: impact of intrinsic transistor and parasitic series resistances",
  IEEE Transactions on Electron Devices 41:1981-1991.

• K Maeda, S Sugita, H Kurita, M Uota, S Uchida, M Hinomaru, Y Mera (1994),
  "Spatial variation of 1/f current noise in scanning tunneling microscopes",
  Journal of Vacuum Science & Technology B, 12(3):2140-2143.

• DS Quon, GJ Sonek, GP Li (1994),
  "1/f noise characterization of base current and emitter interfacial oxide breakup in n-p-n polyemitter bipolar transistors",
  IEEE Electron Device Letters, 15:430-432.

• RA Schiebel (1994),
  "A model for 1/f noise in diffusion current based on surface recombination velocity fluctuations and insulator trapping [HgCdTe]",
  IEEE Transactions on Electron Devices, 41:768-778.

• EP Vandamme, LKJ Vandamme (1994),
  "1/f Noise and its coherence as a diagnostic tool for quality assessment of potentiometers",
  IEEE Transactions on Components, Packaging, and Manufacturing Technology (part A), 17:436-445.

• LKJ Vandamme (1994),
  "Noise as a diagnostic tool for quality and reliability of electronic devices",
  IEEE Transactions on Electron Devices, 41:2176-2187.

• AJ van Kemenade, PJL Herve, LKJ Vandamme (1994),
  "1/f noise in the extinction coefficient of an optical fibre",
  IEE Electronics Letters, 30:1338-1339.

1993

• MJ Deen (1993),
  "Low frequency noise as a characterization tool in InP and GaAs-based double barrier resonant tunneling diodes",
  Materials Science and Engineering B, B20:207-213.

• MJ Deen, JJ Ilowski (1993),
  "Microwave noise characterization of poly-emitter bipolar junction transistors",
  IEE Electronics Letters, 29(8):676-677.

• L.B. Kiss and P. Svedlindh, "New noise exponents in conductor-superconductor and conductor-insulator random composites",
  Physical Review Letters, 71, 2817-? (1993)

• J.L. Melendez, J. Beck, "The role of the insulator in determining 1/f noise in HgCdTe integrating MIS devices", Journal of Electronic Materials,22, 993-998 (1993).

• R.A. Schiebel, D. Blanks, D. Bartholomew, and M.A. Kinch, "Evidence for 1/f noise in diffusion current due to insulator trapping and surface recombination velocity fluctuations [HgCdTe, SRV]", Journal of Electronic Materials, 22, 1081-1085 (1993).

• G.M. Williams, R.E. DeWames, J. Bajaj, E.R. Balzejewski, "Photo-induced excess low frequency noise in HgCdTe photodiodes [1/f noise]" Journal of Electronic Materials, 22, 931-941 (1993).

1992

• J Bajaj, ER Blazejewski, GM Williams, RE DeWames, M Brown (1992),
  "Noise (1/f) and dark currents in midwavelength infrared PACE-1 HgCdTe photodiodes [MWIR detectors]",
  Journal of Vacuum Science & Technology B, 10: 1617-1625.

• IS Bakshee, EA Salkov, and BI Khizhnyak (1992),
  "1/f noise in HgCdTe converted from n- to p-type by native doping",
  Solid State Communications, 81:781-784.

• IS Bakshee, LA Karachevtseva, AV Lyubchenko, VA Petryakov, EA Salkov and BI Khizhnyak (1992),
  "Influence of compensating annealing on the 1/f noise in CdHgTe [Hg(1-x)Cd(x)Te, HgCdTe]",
  Sov. Phys. Semicond., 26:97-99.

• R Fastow (1992),
  "Contact resistance and 1/f noise of Sn/In/HgCdTe contacts",
  Solid-State Electronics, 35: 1025-1026.

• TGM Kleinpenning (1992),
  "Location of low-frequency noise sources in submicrometer bipolar transistors ",
  IEEE Transactions on Electron Devices, 39:1501-1506.

• WS Lau, EF Chor, CS Foo, WC Khoong (1992),
  "Strong low-frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilities",
  Japanese Journal of Applied Physics, 31:L1021-L1023.

• Y Nemirovsky and A Unikovsky (1992),
  "Tunneling and 1/f noise currents in HgCdTe photodiodes",
  Journal of Vacuum Science & Technology B, 10: 1602-1610.

• A Ng, MJ Deen, J Ilowski (1992),
  "Determination of the trap energy levels and emitter area dependence of noise in poly-emitter bipolar junction transistors from generation-recombination noise spectra",
  Canadian Journal of Physics, 70(10-11):949-958.

• W.J. Zheng, X.C. Zhu (1992),
  "Experimental studies on low frequency noise of HgCdTe x=0.2 photoconductors [1/f noise]",
  Infrared Physics, 33: 27-31.

1991

• I.S. Bakshee, E.A. Salkov (or Sal'kov) and B.I. Khizhnyak, "Decomposition of 1/f noise into individual components in CdHgTe [Hg(1-x)Cd(x)Te, HgCdTe]", Sov. Phys. Tech. Phys, 36, 548 (1991)

• C. Parman, J. Kakalios, "Nonlinear 1/f Noise in Amorphous Silicon",
  Physical Review Letters, 67(18), 2529-2532 (1991).

1990

• IS Bakshee, LA Karachevtseva, AV Lyubchenko, VA Petryakov, EA Salkov (or Sal'kov), BI Khizhnyak (1990),
  "Superposition of burst noise as the origin of 1/f noise due to grain boundaries in CdHgTe [HgCdTe]",
  Physica Status Solidi (a), 117:K37-?.

• IS Bakshee, AV Lyubchenko, EA Salkov (or Sal'kov) and BI Khizhnyak (1990),
  "Two-polarity intermittent burst noise in CdHgTe [HgCdTe]",
  Solid-State Electronics 33: 1653-.

• WA Beck, GD Davis, and AC Goldberg (1990),
  "Resistance and 1/f noise of Au, Al and Ge contacts to (Hg,Cd)Te [HgCdTe, Au/HgCdTe, Al/HgCdTe, Ge/HgCdTe]",
  Journal of Applied Physics, 67:6340-6346.

• Z Celik-Butler, SM Alamgir, and SR Borrello (1990),
  "1/f noise measurements on HgCdTe field-effect transistors [FET]",
  Solid-State Electronics,33: 585-590.

• Z Celik-Butler, W Yang, HH Hoang, WR Hunter (1990),
  "Characterization of electromigration parameters in VLSI metallizations by 1/f noise measurements",
  Solid-States Electronics, 34(2): 185-188 .

• LB Kiss, J Kertesz and J Hajdu (1990),
  "Conductance noise spectrum of mesoscopic systems",
  Z. Phys. B, 81: 299-?.

• XM Li, MJ Deen, S Stapleton, RHS Hardy, O Berolo (1990),
  "Low temperature 1/f noise studies of AlAs-GaAs-AlAs quantum well diodes",
  Cryogenics, 30(12):1140-1145.

• VB Orlov and AV Yakimov (1990),
  "1/f noise in corbino disk: anisotropic mobility fluctuations?",
  Solid-State Electronics, 33: 21-25.

• VB Orlov and AV Yakimov (1990),
  "The further interpretation of Hooge's 1/f noise formula",
  Physica B, 162:13-20.

• Y Nemirovsky, D Rosenfeld (1990),
  "Surface passivation and 1/f noise phenomena in HgCdTe photodiodes",
  Journal of Vacuum Science & Technology A, 8: 1159-1166.

• M Toshimitsu, B Gabor, S Minoru (1990),
  "1/f phonon-number fluctuations in quartz observed by laser light scattering",
  Physical Review Letters, 64(20): 2394-2397.

1989

• LB Kiss, J Hajdu (1989),
  "Transient diffusion 1/f noise model",
  Solid State Communications, 72(8): 799-802.

• R Mvller, A Esslinger, B Koslowski (1989),
  "Noise in vacuum tunneling: Application for a novel scanning microscope",
  Applied Physics Letters, 55(22): 2360-2362.

• VB Orlov and AV Yakimov (1989),
  "Fluctuations in hot charge carriers mobility and 1/f noise",
  Physica B, 154:175-?.

• VB Orlov and AV Yakimov (1989),
  "Anisotropic fluctuations of the carrier mobility and 1/f magnetoresistance noise in semiconductors",
  Sov. Phys. Semicond. 23:834-837.

• RA Schiebel (1989),
  "1/f noise in HgCdTe MISFETs",
  Solid-State Electronics, 32:1003-1007.

• RDS Yadava (1989),
  "A finite fractal cluster theory of 1/f noise in percolation systems near metal-insulator transition",
  Zeitschrift fur Physik B, 76: 365-374.

• A van der Ziel (1989),
  "Formulation of surface 1/f noise processes in bipolar junction transistors and in p-n diodes in Hooge-type form",
  Solid-State Electronics, 32:91-93.

• A van der Ziel, L He, AD van Rheenden, and P Fang (1989),
  "Generation-recombination type 1/f noise in n-i-p diodes",
  Solid-State Electronics, 32: 905-907 .

1988

• I.S. Bakshee, M.Z. Kodalashvili, E.A. Salkov (or Sal'kov) and B.I. Khiznyak, "Study of the 1/f-type fluctuations of the Hall emf in n-type CdHgTe [Hg(1-x)Cd(x)Te, HgCdTe]", Sov. Phys. Semicond. , 22, 1377-1380 (1988).

• R DeWames, JG Pasko, AHB Vanderwyck, GM Williams (1988),
  "Dark current generation mechanisms and spectral noise current in long-wavelength infrared photodiodes [LWIR]",
  Journal of Vaccum Science & Technology A, 6: 2655-2663.

• M. Gesley, L. Swanson, "Thermal-field emission flicker (1/f) noise and diffusive equilibrium density fluctuations",
  Physical Review A, 37(12), 4879-4902 (1988).

• L.B. Kiss, K. Tompa, I. Hevesi, Gy. Trefan, G. Gevay, "Point contact 1/f noise in glassy metal ribbons", Solid State Communications, 66(5) 525 (1988)

• J.A. Testa, X. Song, X.D. Chen, J. Golben, S. Lee, B.R. Patton, J.R. Gaines, "1/f noise - power measurements of copper oxide superconductors in the normal and superconducting states",
  Physical Review B, 38(4), 2922-2925 (1988).

1987

• A Fote, J McDonough, R Egler (1987),
  "Chaos theory and 1/f noise in HgCdTe photodiodes",
  Nuclear Physics B (Proceeding Supplement) 2: 597-?.

• PF Lu (1987),
  "Low-frequency noise in self-aligned bipolar transistors",
  Journal of Applied Physics, 62:1335-1339.

• N Oda, T Yamagata (1987),
  "On 1/f noise characteristics for 0.1eV HgCdTe photoconductors",
  International Journal of IR & mm Waves, 8: 133-153.

• JH Scofield (1987),
  "Method for measuring low-frequency resistance fluctuation spectra",
  Review of Scientific Instruments, 58(6): 985-? .

• E Stoll, O Marti (1987),
  "Restoration of STM data blurred by limited resolution, and hampered by 1/f-like noise",
  Surface Sciences, 181: 222-229.

• K Takagi, T Mizunami, S Masuda (1987),
  "1/f noise measurement in semicontinuous metal films",
  IEEE CHMT, 12(4):687-689.

• X Wu, JB Anderson, and A van der Ziel (1987),
  "Diffusion and recombination 1/f noise in long n+-p HgCdTe diodes",
  IEEE Transactions on Electron Devices, 34: 1971-1977.

1986

• NN Bogoslovski and AV Yakimov (1986),
  "Flicker noise sources in bipolar transistors",
  Radiophysics and Quantum Electronics, 29: 510-517.

• PH Handel, A van der Ziel (1986),
  "Relativistic correction of the Hooge parameter for Umklapp 1/f noise",
  Physica B, 141:145-147.

• A van der Ziel, PH Handel, XL Wu, JB Anderson (1986),
  "Review of the status of quantum 1/f noise in n+p HgCdTe photodetectors and other devices",
  Journal of Vacuum Science & Technology A, 4:2205-2216.

• A van der Ziel, X Zhang, AH Pawlikiewicz (1986),
  "Location of 1/f noise sources in NJT's and HBJT's. I. Theory",
  IEEE Transactions on Electron Devices, ED-33:1371-1377.

1985

• J Bajaj, GM Williams, NH Sheng, M Hinnrichs, DT Cheung, JP Rode, and WE Tennant (1985),
  "Excess (1/f) noise in HgCdTe x=0.3 p-n junctions",
  Journal of Vacuum Science & Technology A, 3:192-194.

• SP Braim (1985),
  "The measurement and analysis of the noise frequency spectrum for SPRITE infrared detectors",
  Proc. SPIE, 590:164-171.

• HK Chung, MA Rosenberg, PH Zimmermann (1985),
  "Origin of 1/f noise observed in HgCdTe x=0.3 variable area photodiode arrays",
  Journal of Vacuum Science & Technology A, 3:189-191.

• DM Fleetwood, N Giordano (1985), "Direct link between 1/f noise and defects in metal film", Physical Review B, 32:736-?.

• MA Gesley, LW Swanson (1985),
  "Spectral analysis of adsorbate induced field-emission flicker noise",
  Physical Review B, 32(12):7703-7712.

• TGM Kleinpenning (1985),
  "1/f noise in p-n junction diodes",
  Journal of Vacuum Science & Technology A, 3:176-182.

• WA Radford, CE Jones (1985), "1/f noise in ion-implanted and double-layer epitaxial HgCdTe photodiodes",
  Journal of Vacuum Science & Technology A, 3:183-188.

• JH Scofield, JV Mantese, WW Webb (1985), "1/f noise in metals: a case for extrnsic origin", Physical Review B, 32:736-?.

• SS Tinchev (1985),
  "Possible mechanism contributing to 1/f noise in SQUIDs",
  Physics Letters A, 108(7):357-358.

• AL Vinson, EL Dereniak (1985),
  "Measurement of 1/f noise of HgCdTe, PtSi and InSb",
  Proc. SPIE, 572:109-?.

1984

• SM Kogan and KE Nagaev (1984),
  "On the low-frequency current 1/f noise in metals",
  Solid State Communications, 49, 387-389 (1984)

• VB Orlov and AV Yakimov (1984),
  "Influence of the charge carriers scattering mechanism on the 1/f noise intensity in doped semiconductors",
  Physica B, 125:314-?.

1983

• WW Anderson, HJ Hoffman (1983),
  "Surface-tunneling induced 1/f noise in Hg(1-x)Cd(x)Te photodiodes [HgCdTe]",
  Journal of Vacuum Science & Technology A, 1:1730-1734.

• DM Fleetwood, N Giordano (1983), "Resistivity dependence of 1/f noise in metal films", Physical Review B, 31:1157-?.

1982

• TGM Kleinpenning (1982),
  "On low-frequency noise in tunnel junctions",
  Solid-State Electronics, 25(1):78-79.

• AV Yakimov (1982),
  "Absorption mechanism of flicker fluctuations of the resistance in thin conducting films",
  Radiophysics and Quantum Electronics, 25:217-?.

1980

• SP Tobin, S Iwasa, TJ Tredwell (1980),
  "1/f noise in (Hg,Cd)Te photodiodes [HgCdTe]",
  IEEE Transactions on Electron Devices, 27:43-48.

• VV Zaitsev, VB Orlov and AV Yakimov (1980),
  "Flicker Fluctuations in the Gunn Oscillator",
  Radiophysics and Quantum Electroics, 23:804-?.

1978

• HI Hanafi and A van der Ziel (1978),
  "Flicker noise in HgCdTe [1/f noise]",
  Physica B, 94: 351-356.

• FN Hooge, LKJ Vandamme (1978),
  "Lattice scattering causes 1/f noise",
  Physics Letters A, 66: 315-316.

• TGM Kleinpenning (1978),
  "On low-frequency noise in tunnel diodes",
  Solid-State Electronics, 21(7): 927-931 .

• TGM Kleinpenning (1978),
  "1/f noise in solid state single injection diodes",
  Physica B, 94(2): 141-151 .

1977

• LKJ Vandamme, WMC van Bokhoven (1977)
  "Conductance noise investigations with four arbitrarily shaped and placed electrodes",
  Applied Physics, 14:205-215.

1976

• LKJ Vandamme (1976),
  "On the calculation of 1/f noise of contacts",
  Applied Physics, 11: 89-96.

• LKJ Vandamme, RP Tijburg (1976),
  "1/f noise measurements for characterizing multispot low-Ohmic contacts",
  Journal of Applied Physics, 47(5): 2056-?.

1974

• M.A. Caloyannides (1974),
  "Microcycle spectral estimates of 1/f noise in semi-conductors",
  Journal of Applied Physics, 45:307-316.

• TGM Kleinpenning (1974),
  "1/f noise in thermo EMF of intrinsic and extrinsic semiconductors",
  Physica, 77(1): 78-98.

• LKJ Vandamme (1974),
  "1/f noise of point contacts affected by uniform films",
  Journal of Applied Physics, 45(10):4563-?.

1970

• FN Hooge (1970),
  "1/f noise in the conductance of ions in aqueous solutions",
  Physics Letters A, 33(3): 169-170.

1969

• FN Hooge, AMH Hoppenbrouwers (1969),
  "1/f noise in continuous thin gold films",
  Physica A, 45:386-392.

• V Radeka (1969),
  "1/f noise in physical measurements",
  IEEE Transactions of Nuclear Science, 16:17-35.

1956

• H Bittel, K Scheidhauer (1956),
  "On the question of noise in metallic conductors" (in German),
  Z. Angew. Phys. 8:417-422.

1935

• R Otto (1935),
  "The noise of carbon microphones" (in German),
  Hochfreq. Tech. u. Elektroakus, 45:187-198.

1932

• B Schonwald (1932),
  "Electrical and optical properties of semiconductors" (in German),
  Ann. Phys. 15:395-421.

1931

• HA Frederick (1931),
  "The development of the microphone",
  Journal of Acoustic Society of American, 3, supplement to No. 1.

1926

• W Schottky (1926),
  "Small-shot effect and flicker effect",
  Physical Review, ?:74-103.

1925

• JB Johnson (1925),
  "The Schottky effect in low frequency circuits",
  Physical Review, 26:71-85.

1922

• JB Johnson (1922),
  Ann. de Phys. 67:154-?.

• W Schottky (1922),
  Ann. de Phys. 68:157-?.

1918

• W Schottky (1918),
  "Über spontane Stromschwankungen in verschiedenen Elektrizitätsleitern," Annalen der Physik, 57:541-567.